lx5506 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2003 rev. 1.2b, 2005-03-25 www. microsemi . com ingap hbt 4.5 ? 6ghz power amplifier tm ? description the lx5506 is a power amplifier designed for the fcc unlicensed national information infrastructure (u-nii) band, hyperlan2 and japan wlan applications in the 4.9-5.95 ghz frequency range. the pa is implemented as a three-stage monolithic microwave integrated circuit (mmic) with active bias and complete on-chip input matching. the device is manufactured with an ingap/gaas heterojunction bipolar transistor (hbt) ic process (mocvd). it operates at a single positive voltage supply of 3.3v (nominal), with +26dbm of p1db and up to 23db power gain in the 5.15 - 5.85ghz frequency range with a simple output matching capacitor pair. for ofdm operation (64qam, 54mbps), the pa provides +18dbm linear output power with a very low evm (error-vector magnitude) of 3%, and consumes about 190ma total dc current. at higher supply voltage of 5v, the same device provides +24dbm linear ofdm output power with 5% evm. the lx5506 is ava ilable in a 16-pin 3mmx3mm micro-lead package (mlp). the compact footprint, low profile, and excellent thermal capability of the mlp package makes the lx5506 an ideal solution for broadband, high-gain power amplifier requirements for ieee 802.11a, and hiperlan2 portable wlan applications. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features ? advanced ingap hbt ? single-polarity 3.3v supply ? evm ~ 3% at pout=18dbm for 64qam/ 54mbps ofdm ? p1db ~ +26dbm ? power gain ~ 23db at 5.25ghz for icq ~100ma ? power gain ~ 21db at 5.85ghz for icq ~100ma ? total current ~190ma at pout=18dbm at 5.25ghz ? acpr ~ -50dbc at 30mhz offset at pout=18dbm ? complete on-chip input match ? simple output capacitor match ? small footprint: 3x3mm2 ? low profile: 0.9mm applications ? fcc u-nii wireless ? ieee 802.11a ? hiperlan2 ? 5ghz cordless phone product highlight package order info lq plastic mlpq 16-pin lx5506lq rohs compliant / pb-free transition dc: 0418 note: available in tape & reel. append the letters ?tr? to the part number. (i.e. lx5506lq-tr) this device is classified as esd level 0 in accordance with jesd22-a114-b, (hbm) testing. appropriate esd procedures should be observed when handling this device. l l x x 5 5 5 5 0 0 6 6
lx5506 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2003 rev. 1.2b, 2005-03-25 www. microsemi . com ingap hbt 4.5 ? 6ghz power amplifier tm ? absolute maximum ratings dc supply volta ge, rf off ...............................................................................6v collector current ........................................................................................600ma total power di ssipation....................................................................................3w rf input power.........................................................................................+15dbm maximum junction temperature (t j max) .................................................. 150c operation ambient temperature .......................................................-40 to +85c storage temperature........................................................................-60 to +150c peak package solder reflow temperature (40 second max. exposure)........ 260c (+0, -5) note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, negative out of specified terminal . package pin out rf in n.c. vb2 vb3 vc1 rf out rf out vc3 n.c. * pad is ground rf in vcc vb1 n.c. n.c. n.c. vc2 * 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 lq p ackage (bottom view) rohs / pb-free 100% matte tin lead finish functional pin description name description rf in rf input for the power amplifier. this pin is dc-shorted to gnd but ac-coupled to the transistor base of the first stage. vcc supply voltage for the bias reference and control circuits. vb1 bias current control voltage for the first stage. vb2 bias current control voltage for the second stage. vb3 bias current control voltage for the third stage. rf out rf output for the power amplifier. this pin is ac-coupled and does not require a dc-blocking capacitor. vc1 power supply for the first stage amplifier. vc2 power supply for the second stage amplifier. vc3 power supply for the third stage amplifier. gnd the center metal base of the mlp package provides both dc and rf ground as well as heat sink for the power amplifier. n.c. these are unused pins and not connected to the device. th ey can be treated either as open pins or connected to ground for better heat dissipation. p p a a c c k k a a g g e e d d a a t t a a
lx5506 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2003 rev. 1.2b, 2005-03-25 www. microsemi . com ingap hbt 4.5 ? 6ghz power amplifier tm ? electrical characteristics test conditions: vcc = 3.3v, vref = 2.9v, icq = 100ma, t a = 25c, unless otherwise specified. parameter condition symbol min. typ. max. min. typ. max. unit frequency range f 5.15 5.35 5.7 5.85 ghz output power at 1db compression pout 25 26 25 26 dbm power gain at pout=18dbm gp 21 23 19 21 db evm at pout=18dbm 64qam/54mbps 3 3 % total current at pout=18dbm ictotal 190 200 ma quiescent current icq 100 100 ma bias control reference current for icq=100ma iref 2.2 2.2 ma small-signal gain s21 22 20 db gain flatness over 200mhz ? s21 +/-0.5 +/-0.5 db gain variation over temperature -40 to +85 o c ? s21 3 a) , 1 b) 2 a) , 1 b) db input return loss s11 -15 -10 -15 -10 db output return loss s22 -7 -15 db reverse isolation s12 -40 -40 db second harmonic pout = 18dbm -40 -60 dbc third harmonic pout = 18dbm -40 -40 dbc ramp-on time 10 - 90% t on 100 100 ns note a) vref = 2.9v b)vref = 3.0v e e l l e e c c t t r r i i c c a a l l s s
lx5506 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 copyright ? 2003 rev. 1.2b, 2005-03-25 www. microsemi . com ingap hbt 4.5 ? 6ghz power amplifier tm ? evm vs pout freq=5.15ghz evm vs pout freq=5.85ghz 15 16 17 18 19 20 21 pout (dbm) 1 2 3 4 5 6 7 8 9 10 evm (%) 150 160 170 180 190 200 210 220 230 240 ictotal (ma) evm ictotal typical evm and total current vs. pout at vc = 3.3v (vc = 3.3v, icq = 100ma, 64qam / 54mbps) 15 16 17 18 19 20 21 pout (dbm) 1 2 3 4 5 6 7 8 9 10 11 evm (%) 160 170 180 190 200 210 220 230 240 250 260 ictotal (ma) evm ictotal typical evm and total current vs. pout at vc = 3.3v (vc = 3.3v, icq = 100ma, 64qam / 54mbps) evm vs frequency current vs frequency typical evm vs. frequency (vc =3.3v, icq = 100ma, pout = 18dbm, 64qam / 54mpbs) typical total current vs. frequency (vc=3.3v, icq=100ma, pout=18dbm, 64qam/54mbps) notes: all evm data are for ofdm signal of 64qam/54mbps and ar e actual measured data without any de-embedding. source evm is around 1.4 - 1.8% for the input power levels for test. acpr vs output power p1db vs frequency 15 16 17 18 19 20 21 pout (dbm) -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -44 -43 -42 -41 -40 acpr (dbc) @ 30mhz offset freq=5.15ghz freq=5.85ghz typical acpr vs. output power (vc = 3.3v, icq = 100ma, 64qam / 54mpbs) typical p1db vs. frequency (icq = 100ma for vc = 3.3v, icq = 110ma for vc=4.5v) c c h h a a r r t t s s 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 frequency (ghz) 23 24 25 26 27 28 p 1 d b ( d b m ) p1db 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 frequency (ghz) 1 1.5 2 2.5 3 3.5 4 4.5 5 e v m ( % ) evm_measured evm_deembedded 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 frequency (ghz) 170 175 180 185 190 195 200 205 210 i c t o t a l ( m a ) ictotal
lx5506 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 copyright ? 2003 rev. 1.2b, 2005-03-25 www. microsemi . com ingap hbt 4.5 ? 6ghz power amplifier tm ? power sweep data 5.15ghz power sweep data 5.85ghz pin (dbm) 30 25 20 15 10 5 0 -5 -28 -23 -18 -13 -8 -3 2 7 12 100 200 300 400 500 600 700 800 pout (dbm) / gain (db) itotal (ma) pout gain itotal typical power sweep data at vc = 3.3v (vc = 3.3v, icq = 100ma, no heat sink) frequency = 5.15ghz -5 0 5 10 15 20 25 30 -28 -23 -18 -13 -8 -3 2 7 12 pin (dbm) pout (dbm) / gain (db) 100 200 300 400 500 600 700 800 itotal (ma) pout gain itotal typical power sweep data at vc = 3.3v (vc = 3.3v, icq = 100ma, no heat sink) frequency = 5.85ghz recommended bias resistor quiescent current vs vref 2.9 3 3.1 3.2 3.3 available vref (v) 0 20 40 60 80 100 120 140 160 180 bias resistor r6 (ohm) recommended bias resistor for available vref (adjusted r6 value for obtaining nominal icq = 10ma at vc = 3.3v) 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 vref (v) 0 50 100 150 200 250 300 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 vref (v) 0 50 100 150 200 250 300 icq (ma) icq/ vref ~ 0.28ma/mv icq/ vref ~ 0.18ma/mv r6=47 r6=180 quiescent current vs. vref (vc = 3.3v, bias resistor r6 = 47 ? & 180 ? ) s-parameter data small signal vs supply voltage 5.2 5.4 5.6 5.8 5.0 6.0 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 -50 25 frequency (ghz) db(s (1,1)) db(s (2,1)) db(s (2,2)) db(s (1,2)) typical s-parameter data at room temperature (vc = 3.3v, r6 = 0 ? , vref = 2.9v. icq = 100ma) 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4 4.5 supply voltage vc (v) 21 21.5 22 22.5 23 23.5 24 s21 (db) @ 5.25ghz s21 typical small signal gain vs. supply voltage (r6 = 0 ? , vref = 2.9v, icq = 100ma for vc = 3.3v, freq = 5.25ghz) c c h h a a r r t t s s
lx5506 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 6 copyright ? 2003 rev. 1.2b, 2005-03-25 www. microsemi . com ingap hbt 4.5 ? 6ghz power amplifier tm ? small signal vs bias ref. small signal gain over temp 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 vref (v) 0 5 10 15 20 25 30 s21 (db) @ 5.25ghz pa off pa on typical small signal gain vs. bias reference voltage (vc = 3.3v, r6 = 47 ? , vref = 3.0v, icq = 100ma, freq = 5.25ghz) 24 23 22 21 20 s21 (db) 19 18 17 16 5.15 5.25 5.35 5.45 +85 c +25 c 0 c -20 c -40 c 5.55 frequency (ghz) 5.65 5.75 5.85 typical small signal gain variation over temperature (vc = 3.3v, r6 = 0 ? , vref = 2.9v, icq = 100ma at room temperature) c c h h a a r r t t s s
lx5506 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 7 copyright ? 2003 rev. 1.2b, 2005-03-25 www. microsemi . com ingap hbt 4.5 ? 6ghz power amplifier tm ? package dimensions lq 16-pin mlpq 3x3 (75 x 75 mil dap) e d e b e2 d2 a a3 a1 l k m illimeters i nches dim min max min max a 0.80 1.00 0.031 0.039 a1 0 0.05 0 0.002 a3 0.20 ref 0.008 ref b 0.18 0.30 0.007 0.012 d 3.00 bsc 0.118 bsc e 3.00 bsc 0.118 bsc e 0.50 bsc 0.020 bsc d2 1.55 1.80 0.061 0.071 e2 1.55 1.80 0.061 0.071 k 0.2 - 0.008 - l 0.35 0.50 0.012 0.020 note: 1 . dimensions do not include mold fl ash or protrusions; these shall not exceed 0.155mm(.006?) on any side. lead dimension shall not include solder coverage. m m e e c c h h a a n n i i c c a a l l s s
lx5506 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 8 copyright ? 2003 rev. 1.2b, 2005-03-25 www. microsemi . com ingap hbt 4.5 ? 6ghz power amplifier tm ? tape and reel tape and reel specification 4.00mm 1.75mm 5.5 0.05mm 3.30mm ? 1.50mm ? 1.50mm 12.00 0.3mm 1.10mm 0.30mm part orientation top view side view 3.30mm 8.00mm 10.6mm ? 13mm +1.5 -0.2 ? 330mm 0.5 ? 97mm 1.0 2.2mm 13mm +1.5 m m e e c c h h a a n n i i c c a a l l s s
lx5506 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 9 copyright ? 2003 rev. 1.2b, 2005-03-25 www. microsemi . com ingap hbt 4.5 ? 6ghz power amplifier tm ? notes production data ? information contained in this document is proprietary to microsemi and is current as of publication date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. n n o o t t e e s s
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